TY - CONF T1 - Evaluation of Drain-Source Voltage in Switch Transient Time Intervals as Gate Oxide Degradation Precursor of SiC Power MOSFETs CY - Hannover, Germany JO - 24th European Conference on Power Electronics and Applications EPE'22 ECCE Europe PY - 2022/09/05 AU - Foster M AU - Naghibi J AU - Mohsenzade S AU - Mehran K ED - Y2 - 2025/03/14 ER -