TY - CONF
T1 - Evaluation of Drain-Source Voltage in Switch Transient Time Intervals as
Gate Oxide Degradation Precursor of SiC Power MOSFETs
CY - Hannover, Germany
JO - 24th European Conference on Power Electronics and Applications EPE'22 ECCE Europe
PY - 2022/09/05
AU - Foster M
AU - Naghibi J
AU - Mohsenzade S
AU - Mehran K
ED -
Y2 - 2025/03/14
ER -