TY - JOUR
T1 - Effect of experimental parameters on doping contrast of Si p?n junctions in a FEG-SEM
JO - Microelectronic Engineering
UR - http://dx.doi.org/10.1016/j.mee.2004.03.080
PY - 2004/06/01
AU - KAZEMIAN P
ED -
DO - DOI: 10.1016/j.mee.2004.03.080
PB - Elsevier BV
VL - 73-74
SP - 948
EP - 953
Y2 - 2025/03/16
ER -